Analogue MISFET with threshold voltage adjuster

Details Analogue MISFET with threshold voltage adjuster Analogue MISFET with threshold voltage adjuster

1995-07-13

2000-08-15

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257215, 257368, H01L 2976

Patent

active

06104072&

ABSTRACT:
A threshold voltage or a channel potential of a MIS device can be set in an analogue fashion. A MIS device includes a multi-layer structure having a gate insulating film in which an oxide film, a nitride film and an oxide film are laminated in that order. The threshold voltage or channel potential of the MIS device can be controlled by an amount of electric charges injected into the nitride film.

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