Semiconductor device

Details Semiconductor device Semiconductor device

1997-07-28

2000-08-15

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 31119

Patent

active

061040673

ABSTRACT:
A semiconductor device comprising a structure in which a plurality of gate electrodes connected in common are arranged superposed on the active layer, wherein the widest gate electrode is located on the drain side. In this manner, local difference in electric field intensity applied to the channel region can be corrected to prevent a local degradation or breakdown from occurring.

REFERENCES:
patent: 4158807 (1979-06-01), Senturia
patent: 5528065 (1996-06-01), Battersby et al.
patent: 5650636 (1997-07-01), Takemura et al.

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