Method for selective etching of antireflective coatings

Details Method for selective etching of antireflective coatings Method for selective etching of antireflective coatings

1999-08-25

2000-08-15

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

756757, H01L 213165

Patent

active

061036374

ABSTRACT:
The present invention relates to the fabrication of integrated circuit devices, and more particularly, to a method of etching inorganic antireflective layers without etching excessive amounts of an underlying oxide. According to one aspect of the present invention, the antireflective layer is selectively etched using an etchant which comprises about 35-40 wt. % NH.sub.4 F and about 0.9-5.0 wt. % H.sub.3 PO.sub.4 in an aqueous solution.

REFERENCES:
patent: 3979241 (1976-09-01), Maeda et al.
patent: 4269654 (1981-05-01), Deckert et al.
patent: 5472562 (1995-12-01), Ziger
patent: 5885903 (1999-03-01), Torek et al.
patent: 5965465 (1999-10-01), Rath et al.

Affiliated with

Also associated with

Rating

Method for selective etching of antireflective coatings does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for selective etching of antireflective coatings, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for selective etching of antireflective coatings will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2006505