Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-07-02
2000-08-15
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438626, 438627, 438631, 438632, 438633, 438639, 438618, H01L 214763
Patent
active
061036188
ABSTRACT:
A method for forming an interconnection in a semiconductor element includes a process for forming a groove on an underlying substrate so as to correspond to the designed pattern of the interconnection. An underlayer for improving crystalline orientation of the interconnection is formed on the underlying substrate having the groove. A thin film of interconnection material is formed in the groove and a heattreatment process is carried out to ensure that the groove is filled with the thin film of the interconnection material. Formation of the interconnection is completed by polishing the surface of the thin film by a predetermined quantity.
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Kazuhide Abe et al., "The Effect of Underlayer Texture on Cu Film Orientation in Cu/Refractory-Metal Structure" Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials, Hamamatsu, 1997, pp. 298-299.
Bowers Charles
Lee Hsien Ming
OKI Electric Industry Co., Ltd.
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