Semiconductor memory having a stabalized reference potential for

Details Semiconductor memory having a stabalized reference potential for Semiconductor memory having a stabalized reference potential for

1989-01-17

1991-01-01

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365210, 365185, G11C 700, G11C 702, G11C 1134

Patent

active

049823647

ABSTRACT:
A semiconductor memory device comprises first and second dummy memory cells. The first dummy memory cell is connected between a normal row line and a dummy column line. The second dummy memory cell is connected to a dummy row line and the dummy column line. The dummy row line is applied with an output voltage of a bias circuit which applies a constant voltage. The second dummy memory cell is used as a reference memory cell and generates a reference potential which is kept unchanged.

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patent: 4644501 (1987-02-01), Nagasawa
patent: 4692904 (1987-09-01), Sato et al.
patent: 4819212 (1989-04-01), Nakai et al.

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