Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1993-08-04

1994-11-22

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365226, 365222, G11C 1140

Patent

active

053674871

ABSTRACT:
An external source voltage is received by a semiconductor memory chip. A first source voltage corresponding to the external source voltage and a second source voltage which is lower than the first source voltage are supplied to an internal circuit of the semiconductor memory chip. The memory chip includes a memory cell array section, having at least a sense amplifier, and a peripheral circuit. The first source voltage is supplied to the memory cell array section when data is transferred between the semiconductor memory chip and an external device, and the second source voltage is supplied thereto to read and write data within the semiconductor memory chip when data is maintained only. The first source voltage is supplied to the peripheral circuit, when the second source voltage is supplied to the memory cell array section to maintain data.

REFERENCES:
patent: 4691123 (1987-09-01), Hashimoto
patent: 5046052 (1991-09-01), Miyaji et al.
patent: 5222044 (1993-06-01), Tsujimoto

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