Semiconductor device having diffusion regions formed with an ion

Details Semiconductor device having diffusion regions formed with an ion Semiconductor device having diffusion regions formed with an ion

1995-06-07

1996-12-17

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257657, H01L 2976

Patent

active

055856586

ABSTRACT:
In implantation of ions into a wafer, in the manufacture of a semiconductor device, a desired ion beam absorber pattern having locally different thicknesses is previously formed on a major surface of the wafer. The ion beam absorber pattern absorbs an ion beam to be implanted and is formed of a thin film material with its absorbency varying depending on its thickness. Ions are implanted once on the major surface of the wafer through this ion beam absorber pattern to form desired different impurity profiles in depth of desired regions on the major surface of the wafer.

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Fairfield, "Masking Technique for Ion Implantation", IBM Technical Disclosure Bulletin, vol. 13, No. 3, Aug. 1970, pp. 806.
Wolf et al., "Silicon Processing for the VLSI Era", vol. 1, Lattice Press, Sunset Beach, CA, pp. 504-511.

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