Porous dielectric material with a passivation layer for electron

Details Porous dielectric material with a passivation layer for electron Porous dielectric material with a passivation layer for electron

1995-06-07

1997-08-26

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257642, 257637, 257760, 257759, H01L 5100

Patent

active

056613440

ABSTRACT:
A semiconductor device and process for making the same are disclosed which use porous dielectric materials to reduce capacitance between conductors, while allowing conventional photolithography and metal techniques and materials to be used in fabrication. In one structure, patterned conductors 18 are provided on an interlayer dielectric 10, with a substrate encapsulation layer 31 deposited conformally over this structure. A layer of porous dielectric material 22 (e.g. dried SiO.sub.2 gel) is then deposited to substantially fill the gaps between and also cover the conductors. A substantially solid cap layer 14 of a material such as SiO.sub.2 is then deposited, followed by a photolithography step to define via locations. Vias are etched through the cap layer, and then through the porous dielectric. A via passivating layer 30 is conformally deposited and then anisotropically etched to clear the bottom of the vias while leaving a passivating liner in the via, preventing the via metal from directly contacting the porous material. A second application of these steps may be used to form a second, overlying structure of patterned conductors 38, encapsulating layer 36, porous dielectric layer 40, and cap layer 42.

REFERENCES:
patent: 4406053 (1983-09-01), Takasaki et al.
patent: 4481283 (1984-11-01), Kerr et al.
patent: 4652467 (1987-03-01), Brinker et al.
patent: 4876217 (1989-10-01), Zdebel
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5155576 (1992-10-01), Mizushima
patent: 5302551 (1994-04-01), Iranmanesh et al.
patent: 5342808 (1994-08-01), Brigham et al.
patent: 5364818 (1994-11-01), Ouellet
patent: 5393712 (1995-02-01), Rostoker et al.
patent: 5426330 (1995-06-01), Joshi et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5494858 (1996-02-01), Gnade et al.
patent: 5504042 (1996-04-01), Cho et al.
J. Fricke and A. Emmerling, J. Am. Ceram. Soc. 75 (1992) 2027 no month.
L. W. Hrubesh, L. E. Keene and V. R. Latorre, J. Materials Res. 8 (1993) 1736 no month.
H. D. Gesser and P. C. Goswami, Chem. Rev. 89 (1989) 765 no month.
S. T. Mayer, R. W. Pekala and J. L. Kaschmitter, J. Electrochem. Soc. 140 (1993) 446 no month.

Affiliated with

Also associated with

Rating

Porous dielectric material with a passivation layer for electron does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Porous dielectric material with a passivation layer for electron, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Porous dielectric material with a passivation layer for electron will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1990314