Relaxation oscillator using integrated RTC structure

Details Relaxation oscillator using integrated RTC structure Relaxation oscillator using integrated RTC structure

1995-03-08

1997-08-26

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257380, 257528, 257533, 333111, H01L 2976

Patent

active

056613245

ABSTRACT:
A resistor-capacitor-transistor type of integrated circuit comprises mainly a non-self-aligned N diffusion bar 1 covered with a polysilicon plate, and a drain type N diffusion, self-aligned by the polysilicon plate. The resulting structure is a distributed resistor-capacitor-transistor quadripole whose main characteristics are that it is very compact and that the time taken by the capacitor to get discharged through the transistor is independent of the dimensions of the structure.

REFERENCES:
patent: 3471755 (1969-10-01), Bilotti
patent: 3978431 (1976-08-01), Lattin
patent: 4216451 (1980-08-01), Nishimura et al.
patent: 4285001 (1981-08-01), Gerzberg et al.
patent: 5430319 (1995-07-01), Fournel et al.

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