Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-04-20
1995-11-07
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 36518501, H01L 2968, H01L 2978
Patent
active
054649994
ABSTRACT:
The present invention provides a method of programming and erasing an alternate metal/source virtual ground flash EPROM cell array. The method imparts the ease of the program/erase mechanism of the conventional T-shaped ETOX cell to a contactless architecture with much smaller cell size and easier scalability and with improved drain turn on.
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patent: 5017980 (1991-05-01), Gill et al.
patent: 5149665 (1992-09-01), Lee
patent: 5151375 (1992-09-01), Kazerounian et al.
Gautam Verma, et al.; "Reliability Performance of ETOX Based Flash Memories".
B. J. Woo, et al.; "A Poly-Buffered Face Technology for High Density Flash Memories"; VLSI Symposium 1991.
B. J. Woo et al.; "A Novel Memory Cell Using Flash Array Contactless EPROM (Face) Technology"; IEEE 1990, IEDM 90-91.
Yosiaki S. Hisamune et al.; "A 3.6 uM.sup.2 Memory Cell Structure for 16 Mb EPROMS"; IEDM 1989 p. 583.
Albert Bergemont et al.; "A High Performance CMOS Process for Submicron 16 MB EPROM"; 1989 IEEE IEDM p. 591.
Guay John
Jackson Jerome
National Semiconductor Corporation
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