Method for removing sidewall protective film

Details Method for removing sidewall protective film Method for removing sidewall protective film

1996-08-19

1997-08-26

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

216 46, 438704, 438963, 438720, H01L 21302

Patent

active

056606818

ABSTRACT:
A method for processing a layer of a silicon-based material on a wafer by which a sidewall protective film may be removed sufficiently and efficiently. An etching gas capable of yielding chlorine- or bromine-based chemical species and oxygen-based chemical species is used for dry etching a polycide film formed on a gate insulating film, plasma processing with an oxygen-based gas is then carried out for ashing the resist mask and removing carbonaceous components in the sidewall protective film. In addition, the sidewall protective film is oxidized so that the composition to that of stoichiometrically stable SiO.sub.2 is approached. Subsequently, the modified sidewall protective film is removed by processing with a dilute hydrofluoric acid solution. Since this sufficiently removes the sidewall protective film, it becomes possible to reduce the amount of dust and to improve coverage of a film to be formed by the next step. In this manner, a semiconductor device may be prepared with improved reliability and production yield.

REFERENCES:
patent: 4784720 (1988-11-01), Douglas
patent: 5185058 (1993-02-01), Cathey, Jr.
patent: 5240554 (1993-08-01), Hori et al.
"Film Redeposition On Vertical Surfaces During Reactive Ion Etching"; Allred et al.; 1989; J. Vac. Sci; 7(3), pp. 505-511.
"Silicon Processing for the VLSI. Era-vol. 1--Process Technology"; Wolf et al.; Lattice Press; Sunset Beach, Ca; .COPYRGT.1986; pp. 564-565.

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