Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-23
2000-10-03
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 30, H01L 2930, H01L 29788, H01L 2906
Patent
active
061276987
ABSTRACT:
The present invention proposes a structure of nonvolatile memory cell with a textured tunnel oxide and a high capacitive-coupling ratio. A non-tunnel oxide is formed on the semiconductor substrate. The tunnel oxides with textured surfaces are formed on the semiconductor substrate and are separated by the non-tunnel oxide. The source and drain are formed aligned to the tunnel oxides in the semiconductor substrate. The floating gate, the interpoly dielectric and the control gate, are formed in turn over the tunnel and non-tunnel oxides. Due to the textured structure of the tunnel oxide, the high-density and high-speed nonvolatile memory can be achieved.
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Baumeister Bradley William
Hardy David
Texas Instruments - Acer Incorporated
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