Microwave plasma processing method and apparatus

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156345, 1566431, 216 70, H01L 21302

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active

057858071

ABSTRACT:
The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.

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Silicon Processing for the VLSI ERA--vol. 1 I; Wolf; Lattice Press; Sunset Beach CA; .COPYRGT.1986; pp. 564-567.
"Silicon Processing for the VLSI Era--vol. 1--Process Technology"; Wolf et al., Lattice Press; Sunset Beach, CA., .COPYRGT.1986; pp. 547 to 551.

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