High-frequency, high-density semiconductor chip package with scr

Details High-frequency, high-density semiconductor chip package with scr High-frequency, high-density semiconductor chip package with scr

1995-12-29

1997-02-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With contact or metallization configuration to reduce...

257659, 257692, 257784, 257786, H01L 2900, H01L 23552, H01L 2348

Patent

active

056061960

ABSTRACT:
A semiconductor device package including a semiconductor chip formed with a plurality of bonding pads including at least two multiple-bonding pads to which identical signals are transmitted; a substrate provided with a chip-support and a plurality of conductors for electrically connecting the chip to external devices; a plurality of bonding wires for electrically connecting said bonding pads to the conductors including multiple-bonding wires for electrically connecting the multiple-bonding pads to corresponding conductors; and a current looper for screening magnetic fields generated from the bonding wires so that the magnetic fields cannot interfere each other, the current looper being located between the multiple-bonding wires and bonded to the substrate at both ends.

REFERENCES:
patent: 3838443 (1974-09-01), Laighton
patent: 5309019 (1994-05-01), Moline et al.
patent: 5536906 (1996-07-01), Haas, Jr. et al.
Lee, Hai-Young et al., "Phenomenological loss equivalence method for planar Quasi-TEM transmission lines with a thin normal conductor or superconductor", IEEE Transactions on Microwave Theory and Techniques, vol. 37, No. 12, Dec. 1989.
Stuzman, W. L. et al., "Moment Methods", Antenna Theory and Design, John Wiley and Sons, Inc., 1981, pp. 306-371.

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