High density integrated semiconductor device

Details High density integrated semiconductor device High density integrated semiconductor device

1993-07-08

1994-05-24

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257365, 257369, 257401, H01L 2702, H01L 2701, H01L 2713

Patent

active

053151437

ABSTRACT:
In a CMOS semiconductor device, a first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on a first plane. A second MOS type device, comprising a second source region, a second channel region and a second drain region is arranged on a second plane above the first MOS type device, with an insulator layer interposed between the two devices. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.

REFERENCES:
patent: 4768076 (1988-08-01), Aoki et al.
K. Hieda et al., IEDM87, 32.2, pp. 736-739.
T. Tanaka et al., IEDM91, 26.6, pp. 683-686.

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