Semiconductor device having a polysilicon capacitor with large g

Details Semiconductor device having a polysilicon capacitor with large g Semiconductor device having a polysilicon capacitor with large g

1993-01-22

1994-05-24

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 64, 257309, H01L 2994

Patent

active

053151402

ABSTRACT:
A semiconductor device includes a capacitor with an insulator having an improved durability. In the semiconductor device, a capacitor lower electrode 11 of the cylindrical capacitor includes a standing wall portion 11b which is formed of a polysilicon layer having a large crystal grain diameter (1000.ANG.-10000.ANG.).

REFERENCES:
patent: 4931897 (1990-06-01), Tsukamoto et al.
patent: 5061650 (1991-10-01), Dennison et al.
IBM Technical Disclosure Bulletin, "High-Density, Folded DRAM Cell" vol. 32, No. 9B, Feb. 1990, pp. 378-381.

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