Power semiconductor integrated circuit device without concentrat

Details Power semiconductor integrated circuit device without concentrat Power semiconductor integrated circuit device without concentrat

1993-06-24

1994-05-24

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257364, 257378, 257380, 257401, 257489, 257491, 257630, H01L 2702, H01L 2934, H01L 2940

Patent

active

053151399

ABSTRACT:
There is provided a power semiconductor integrated circuit device without lowering a breakdown voltage of a pn junction located below a wiring layer to which a high voltage is applied. The device includes an N.sup.- -type semiconductor substrate which is provided with an N.sup.+ -type region and a P.sup.+ -type region to form, for example, a lateral diode. An insulating film is formed over the substrate surface, on which a wiring layer is provided so as to be connected to the N.sup.+ -type region and to pass over the P.sup.+ -type region. A film resistor connected between the N.sup.+ -type region and the P.sup.+ -type region is formed in the insulating film so as to be crossed by the wiring layer at least once.

REFERENCES:
patent: 4157563 (1979-06-01), Bosselaar
patent: 4707719 (1987-11-01), Whight
patent: 5086332 (1992-02-01), Nakagawa et al.

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