Semiconductor memory apparatus

Details Semiconductor memory apparatus Semiconductor memory apparatus

1992-01-27

1994-05-24

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257202, 257390, 257922, H01L 2992

Patent

active

053151380

ABSTRACT:
A semiconductor memory apparatus according to the present invention consists of memory cell forming regions, each formed in a rectangular plane form, a plurality of bit line pairs connected to a plurality of memory cells arranged and formed in these memory cell forming regions, and first and second peripheral circuits formed outside said memory cell forming regions, wherein said first and second peripheral circuits are formed and arranged symmetrically with respect to the point of intersection of two centerlines connecting the middle points of two opposite ones of the four sides of each of said memory cell forming regions, and said bit line pairs are connected to the first and second peripheral circuits. This configuration makes it possible to match the constituent elements of the peripheral circuits with each other and balance the bit line pairs, and thereby to prevent the drop in writing or reading rate and erroneous operations, to which semiconductor memory apparatuses according to the prior art are susceptible.

REFERENCES:
patent: 4926224 (1990-05-01), Redwine
patent: 4941031 (1990-07-01), Kumagai et al.

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