Method for forming a pattern of non-volatile ferroelectric thin

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

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427552, 427555, 427581, 4271263, 427226, B05D 306, B05D 302, H05H 100, C23C 1800

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active

056057237

ABSTRACT:
A pattern of a non-volatile high-performance ferroelectric thin film memory is formed by applying a composition containing hydrolytic metal compounds, and a photosensitizer which generates water when irradiated with active rays onto a substrate. The resultant film is exposed to active rays in compliance with a prescribed pattern to form an image and developed with a solvent to remove non-exposed portions, and then the remaining exposed portions are subjected to a heat treatment to convert the exposed portions into a dielectric substance comprising a metal oxide as expressed by the following formula (I):

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