Method and device for removing a thin film from a wafer backside

Details Method and device for removing a thin film from a wafer backside Method and device for removing a thin film from a wafer backside

1994-09-08

1997-02-25

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 437 12, H01L 21306

Patent

active

056056028

ABSTRACT:
A method and device is provided for removing a thin film from a wafer backside surface. The method and device advantageously removes the thin film without using photoresist masking material or the removal of photoresist material. The thin film at the wafer backside surface is removed without affecting any thin film material on the wafer front surface. As-such, the wafer backside surface is prepared for subsequent dopant ions used for extrinsic gettering of the backside surface. Alternatively, or in addition to dopants used for backside surface gettering, polysilicon can be deposited upon the exposed backside surface to enhance extrinsic gettering properties.

REFERENCES:
patent: 5075256 (1991-12-01), Wang et al.
patent: 5370741 (1994-12-01), Bergman
patent: 5389551 (1995-02-01), Kamakura et al.
DeBusk, et al., "Practical Gettering in High Temperature Processing", Semiconductor International, (May 1992), pp. 124-126.
Runyan, et al., Semiconductor Integrated Circuit Processing Technology, (Addison-Wesley Publishing Company, 1990), pp. 428-442.

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