Method of reactive ion etching of a thin copper film

Details Method of reactive ion etching of a thin copper film Method of reactive ion etching of a thin copper film

Filed on

1995-05-24

Date issued

1996-11-26

Examiner

Fourson, George

Patent Class

Adhesive bonding and miscellaneous chemical manufacture

SubClass

Delaminating processes adapted for specified product

SubSubClass

Delaminating in preparation for post processing recycling step

Other Related Categories

1566461, 437198, 437245, H01L 2128

Type

Patent

Status

active

Patent number

055781667

Description

ABSTRACT:
The method to etch an electrically conductive film comprises the steps of: forming a metal conductor film comprising copper or copper alloy, upon a substrate; and forming a mask pattern upon the metal conductor film; and etching an exposed part of the metal conductor film by the use of the mask pattern and a reactive ion-etching (RIE) employing a plasma of a gas mixture comprising a silicon tetra-chloride (SiCl.sub.4) gas, a nitrogen (N.sub.2) gas and a carbon compound gas, so that the exposed part of the metal conductor film is removed so as to leave the masked part. The metal conductor film may further comprise a diffusion protection layer formed of a refractory metal or its alloy upon and/or underneath the copper/mainly-copper layer. The mask pattern may be typically formed of silicon dioxide (SiO.sub.2). The substrate may further comprise an insulating layer thereon, typically formed of silicon dioxide (SiO.sub.2), for contacting said metal conductor film. The carbon compound gas may typically be a carbon tetra-chloride (CCl.sub.4), methane (CH.sub.4), ethane (C.sub.2 H.sub.6) or propane (C.sub.3 H.sub.8) and so on. When SiCl.sub.4 is employed the content may typically be 6.6 to 15% by volume in the gas mixture. When methane (CH.sub.4) gas is employed the content may typically be 8 to 18% by volume in the gas mixture. The etching step may preferably performed at a substrate temperature higher than 250.degree. C.

REFERENCES:
patent: 4352716 (1982-10-01), Schaible et al.
patent: 4557796 (1985-12-01), Druschke et al.
patent: 4618398 (1986-10-01), Nawata et al.
patent: 4838994 (1989-06-01), Gulde et al.
patent: 4931410 (1990-06-01), Tokunaga et al.
patent: 5200032 (1993-04-01), Shinohara
patent: 5318666 (1994-06-01), Douglas
Ohno et al., Jap. J. Appl. Phys., vol. 28, No. 6, Jun. 1989, pp. L1070-L1072.

Affiliated with

Also associated with

Rating

Method of reactive ion etching of a thin copper film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of reactive ion etching of a thin copper film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reactive ion etching of a thin copper film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1970324