Self-aligned dual gate MOSFET with an ultranarrow channel

Details Self-aligned dual gate MOSFET with an ultranarrow channel Self-aligned dual gate MOSFET with an ultranarrow channel

1995-11-06

1998-05-26

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257280, H01L 310328, H01L 310336, H01L 2980

Patent

active

057570388

ABSTRACT:
A dual gate field effect transistor with an ultra thin channel of substantially uniform width formed by a self-aligned process utilizing selective etching or controlled oxidation between different materials to form a vertical channel extending between source and drain regions, having a thickness in the range from 2.5 nm to 100 nm.

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