Samuel Jonas Wind

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Electron beam proximity correction method for hierarchical desig

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Method of making self-aligned dual gate MOSFET with an ultranarr

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
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Self-aligned dual gate MOSFET with an ultranarrow channel

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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Profile ID: LFUS-PAI-P-591212

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