Seed layers for interconnects and methods for fabricating such s

Details Seed layers for interconnects and methods for fabricating such s Seed layers for interconnects and methods for fabricating such s

1999-10-02

2000-10-24

Zarabian, Amir

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438652, 438763, 438643, H01L 2144, H01L 214763, H01L 2131, H01L 21469

Patent

active

061367079

ABSTRACT:
One embodiment of the present invention is a method for making metallic interconnects including: (a) forming a patterned insulating layer on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening; (b) depositing a barrier layer over the field and inside surfaces of the at least one opening; (c) depositing a first seed layer over the barrier layer using a first deposition technique; (d) depositing a second seed layer over the first seed layer using a second deposition technique, the first and second deposition techniques being different; and (e) electroplating a metallic layer over the second seed layer, the electroplated metallic layer including a material selected from a group consisting of Cu, Ag, or alloys including one or more of these metals.

REFERENCES:
patent: 6069068 (2000-05-01), Rathore et al.
patent: 6087711 (2000-07-01), Givens

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