Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-08-14
2000-10-24
Booth, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438632, 438675, H01L 214763, H01L 21675
Patent
active
061366897
ABSTRACT:
A method of forming micro solder balls for use in a C4 process is described. The solder balls are formed by laying down a peel-away photoresist layer, forming holes in the photoresist layer to expose electrical contacts, depositing a solder layer over the photoresist, forming solder areas in the holes and then, using a tape liftoff process to remove the solder layer and photoresist layer while leaving solder areas in the holes. The solder areas are then heated to allow solder balls to form.
REFERENCES:
patent: 4532002 (1985-07-01), White
patent: 4606998 (1986-08-01), Clodgo et al.
patent: 5457345 (1995-10-01), Cook et al.
patent: 5667132 (1997-09-01), Chirovsky et al.
patent: 5691239 (1997-11-01), Hakey et al.
patent: 5762259 (1998-06-01), Hubacher et al.
patent: 5786270 (1998-07-01), Gorrell et al.
patent: 5838069 (1998-11-01), Itai et al.
patent: 5866475 (1999-02-01), Yanagida
Soller et al., A flexible multi-layer resist system using low temperature plasma-deposited silicon nitride, Journal of the Electrochemical society, vol. 131, No. 4 p. 868-72, Apr. 1984.
Booth Richard
Micro)n Technology, Inc.
Pompey Ron
LandOfFree
Method of forming a micro solder ball for use in C4 bonding proc does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a micro solder ball for use in C4 bonding proc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a micro solder ball for use in C4 bonding proc will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1963348