Method of forming a micro solder ball for use in C4 bonding proc

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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Details

438632, 438675, H01L 214763, H01L 21675

Patent

active

061366897

ABSTRACT:
A method of forming micro solder balls for use in a C4 process is described. The solder balls are formed by laying down a peel-away photoresist layer, forming holes in the photoresist layer to expose electrical contacts, depositing a solder layer over the photoresist, forming solder areas in the holes and then, using a tape liftoff process to remove the solder layer and photoresist layer while leaving solder areas in the holes. The solder areas are then heated to allow solder balls to form.

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Soller et al., A flexible multi-layer resist system using low temperature plasma-deposited silicon nitride, Journal of the Electrochemical society, vol. 131, No. 4 p. 868-72, Apr. 1984.

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