Method and apparatus for correcting defects in photomask

Details Method and apparatus for correcting defects in photomask Method and apparatus for correcting defects in photomask

1997-05-01

2000-10-24

Lund, Jeffrie R

Coating apparatus

Gas or vapor deposition

Having means to expose a portion of a substrate to coating...

118715, 118721, 118722, C23C 1600

Patent

active

061360961

ABSTRACT:
Cr(CO).sub.6 gas is fed into a chamber, in which a photomask substrate having any clear deflect resulting from partial loss of a light-shielding film to fill the inside of the chamber with a Cr(CO).sub.6 gas atmosphere. By irradiating with a laser beam the clear defect of the photomask substrate in the Cr(CO).sub.6 gas atmosphere, the Cr(CO).sub.6 gas is decomposed to form a Cr film over the clear defect. Tetrakis dimethylamino titanium gas (TDMAT) is fed into the chamber to switch the atmosphere in the chamber to a TDMAT gas atmosphere. By irradiating with a laser beam the area of the photomask substrate, arranged in the TDMAT gas atmosphere, where the Cr film has been formed, the TDMAT gas is decomposed to form a TiN film, whose reflectance is smaller than that of the Cr film, over the Cr film.

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