Method of forming deposited semiconductor film

Details Method of forming deposited semiconductor film Method of forming deposited semiconductor film

1994-05-09

1996-03-19

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

136258, 20429808, 20429806, 437 4, 437101, 437108, 437109, C23C 1434

Patent

active

055001025

ABSTRACT:
A method of forming a deposited semiconductor film, comprising the steps of using a target containing semiconductor material to be deposited, an inert gas containing hydrogen at 0.1 at % or more and sputtering energy of a high frequency of 50 MHz or higher, and employing a reactive sputtering method, wherein a sputter deposition process, in which a semiconductor film, the main component of which is the material to be deposited and the thickness of which is 10 nm or thinner, is formed on a substrate, and an irradiation process, in which a surface of the deposited film is irradiated with plasma in an atmosphere containing hydrogen, are alternately repeated, and a DC or high frequency bias voltage is applied to said target and/or said substrate.

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patent: 5248348 (1993-09-01), Miyachi et al.
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