Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-10-12
1996-09-03
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257297, 257407, H01L 27108
Patent
active
055526233
ABSTRACT:
A semiconductor device having a source region, a drain region and a channel region which are formed in a surface portion of a semiconductor substrate, and a gate formed with a material having a relatively high built-in voltage relative to the source region. This semiconductor device may further include, in the semiconductor substrate to extend along the channel region, a highly-doped region having a conductivity type opposite to that of the source region. This highly-closed region may have an impurity concentration gradient which is greater toward its portion facing the abovesaid surface of the substrate. These arrangements serve to prevent extinction of memory due to current leakage during absence of bias voltage which otherwise would develop in semiconductor devices having short-channel and thin gate oxide layer, and due to irradiation of alpha-particle onto the device.
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Nishizawa Jun-ichi
Ohmi Tadahiro
Handotai Kenkyu Shinkokai
Larkins William D.
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