Semiconductor integrated circuit device and manufacturing method

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257345, 257349, 257 351, 257358, 257361, 257394, H01L 2362, H01L 2776, H01L 2701, H01L 2712

Patent

active

058698728

ABSTRACT:
A semiconductor integrated circuit device having an SOI structure is capable of preventing occurrence of leak current flowing from a diffusion layer even when a semiconductor element having a pn-junction is included in the semiconductor substrate. The semiconductor integrated circuit device having the SOI structure is formed with a semiconductor layer, or SOI layer, on a p-type semiconductor substrate through a buried insulating film and further with semiconductor circuit elements serving as functional elements at the SOI layer thus formed. As a protection transistor to protect the semiconductor circuit elements, a MOSFET may be formed in which n-type diffusion layers are formed in the semiconductor substrate. The n-type diffusion layers of the MOSFET are to be surrounded by p-type diffusion layers more highly doped than the semiconductor substrate.

REFERENCES:
patent: 5262664 (1993-11-01), Jung-Suk
patent: 5268317 (1993-12-01), Schwalke et al.
patent: 5352914 (1994-10-01), Fab
patent: 5514902 (1996-05-01), Kawasaki et al.

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