Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-13
2000-10-03
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438624, 438635, 438656, 438664, 438688, 438760, 438763, 438768, 438783, H01L 2144
Patent
active
061272701
ABSTRACT:
Methods of forming refractory metal silicide components are described. In accordance with one implementation, a refractory metal layer is formed over a substrate. A silicon-containing structure is formed over the refractory metal layer and a silicon diffusion restricting layer is formed over at least some of the silicon-containing structure. The substrate is subsequently annealed at a temperature which is sufficient to cause a reaction between at least some of the refractory metal layer and at least some of the silicon-containing structure to at least partially form a refractory metal silicide component. In accordance with one aspect of the invention, a silicon diffusion restricting layer is formed over or within the refractory metal layer in a step which is common with the forming of the silicon diffusion restricting layer over the silicon-containing structure. In a preferred implementation, the silicon diffusion restricting layers are formed by exposing the substrate to nitridizing conditions which are sufficient to form a nitride-containing layer over the silicon-containing structure, and a refractory metal nitride compound within the refractory metal layer. A preferred refractory metal is titanium.
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A. E. Morgan et al., "Interactions of thin Ti films with Si, SiO.sub.2, Si.sub.3 N.sub.4, and SiO.sub.x N.sub.y under rapid thermal anealing", J. Appl. Phys., vol. 64, No. 1, Jul. 1988, pp. 344-353.
Hu Yongjun
Trivedi Jigish D.
Berry Renee R.
Micro)n Technology, Inc.
Nelms David
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