Semiconductor method of making electrical connection between an

Details Semiconductor method of making electrical connection between an Semiconductor method of making electrical connection between an

1996-08-20

1999-02-09

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438621, 438649, 438655, 438657, H01L 2128

Patent

active

058693912

ABSTRACT:
A semiconductor processing method of making electrical connection between an electrically conductive line and a node location includes, a) forming an electrically conductive line over a substrate, the substrate having an outwardly exposed silicon containing node location to which electrical connection is to be made, the line having an outer portion and an inner portion, the inner portion laterally extending outward from the outer portion and having an outwardly exposed portion, the inner portion having a terminus adjacent the node location, and b) electrically connecting the extending inner portion with the node location. An integrated circuit is also described. The integrated circuit includes a semiconductor substrate, a node location on the substrate, and a conductive line over the substrate which is in electrical communication with the node location. The conductive line includes an outer portion and an inner portion. The outer portion has a terminus and the inner portion extends laterally away from the outer portion terminus and generally toward the node location. The inner portion is in electrical communication with the node location.

REFERENCES:
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patent: 5408130 (1995-04-01), Woo et al.
patent: 5439848 (1995-08-01), Hsu et al.
patent: 5686736 (1997-11-01), Natsume
Wolf, S., et al., Filison Processing, vol. 1, Lattice Press, p. 181-182, 264-267, 1986.

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