Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-12-16
1999-02-09
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438477, H01L 2100, H01L 21322
Patent
active
058693637
ABSTRACT:
In a method of manufacturing a semiconductor device, a first heat treatment for crystallization is conducted after nickel elements are introduced in an amorphous silicon film. Then, after the crystalline silicon film is obtained, a heat treatment is again conducted through the heating method which is identical with the first heat treatment. In this state, HCl or the like is added to the atmosphere to conduct gettering of the nickel elements remaining in the crystalline silicon film. With this process, there can be obtained a crystalline silicon film low in the concentration of the metal elements and high in crystallinity.
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Koyama Jun
Miyanaga Akiharu
Teramoto Satoshi
Yamazaki Shunpei
Lebentritt Michael S.
Niebling John F.
Semiconductor Energy Laboratory Co,. Ltd.
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