Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1995-10-17

1999-02-09

Picardat, Kevin

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438487, 148DIG16, H01L 2184

Patent

active

058693629

ABSTRACT:
Thin-film transistors each having a different characteristic are selectively formed on the same substrate. A silicon oxide film, an amorphous silicon film, a barrier film for preventing the diffusion of a nickel element and an oxide film containing a nickel element that promotes the crystallization of silicon are sequentially formed on a glass substrate. The oxide film containing the nickel element is patterned and subjected to a heat treatment, to thereby crystallize the amorphous silicon film under the oxide film whereas the amorphous silicon film from which the oxide film has been removed remains as it is. After the heat treatment has been conducted, a laser light is irradiated on those films. On the silicon film which has been crystallized by heating, a laser light is irradiated in a state where even a necessary energy density is attenuated after the laser light transmits the oxide film, thereby promoting the crystalline property. On the other hand, on the silicon film that remains amorphous in the heat treatment, a laser beam is directly irradiated so as to be crystallized. As a result, two kinds of crystalline silicon films different in crystallizing process is obtained.

REFERENCES:
patent: 3108914 (1963-10-01), Hoerni
patent: 3389024 (1968-06-01), Schimmer
patent: 3783049 (1974-01-01), Sandera
patent: 3873384 (1975-03-01), Chang
patent: 3886569 (1975-05-01), Basi et al.
patent: 3988762 (1976-10-01), Cline et al.
patent: 4090915 (1978-05-01), Keller
patent: 4091527 (1978-05-01), Goodman et al.
patent: 4110488 (1978-08-01), Risko
patent: 4481121 (1984-11-01), Zhang et al.
patent: 4619719 (1986-10-01), Thomas et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" Appl. Phys. Lett. 60(2) (1992) 225.
A.V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Phys. Stat. Sol. A95(1986) 635.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.
R. Kakkad et al., "Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon," J.Appl. Phys., 65(5), Mar. 1, 1989, pp. 2069-72.
G. Liu et al., "Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low-temperature processing," Appl. Phys. Lett. 62(20), May 17, 1993, pp. 2554-2556.
G. Liu et al., "Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing," Appl. Phys. Lett. 55(7), Aug. 14, 1989, pp. 660-662.
R. Kakkad et al., "Low Temperature Selective Crystallization of Amorphous Silicon," Journal of Non-Crystalline Solids, 115, 1989, pp. 66-68.
Y. Kawazu et al., Jpn J. Appl. Phys., vol. 29, No. 12, pp. 2698-2704, "Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation", Dec. 1990.
J.T. Mayer et al., Surface Science, vol. 265, pp. 102-110, "Surface and Bulk Diffusion of Adsorbed Nickel on Ultrathin Thermally Grown Silicon Dioxide", 1992.
M. Morita et al., Appl. Phys. Lett., vol. 49, No. 12, pp. 699-700, "Fluorine-enhanced Photo-Oxidation of Silicon under ArF Excimer Laser Irradiation in an O.sub.2 + NF.sub.3 Gas Mixture", Sep. 22, 1986.
M. Morita et al., Jpn. J. Appl. Phys., vol. 29, No. 12, pp. 2392-2394, "Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide", Dec. 1990.
R. Anton, Thin Solid Films, vol. 118, p. 293-311, "Interaction of Gold, Palladium and Au-Pd Alloy Deposits with Oxidized Si(100) Substrates", Jun. 26, 1984.
S. Wolf et al., "silicon Processing for the VLSI Era", vol. 1, pp. 516-517, 1986.
M. Meuris et al., Jpn, J. Appl. Phys., vol. 31, Part 2, no. 11A, L1514-L1517, "The Relationship of the Silicon Surface Roghness and Gate Oxide Integrity in NH.sub.4 OH/H.sub.2 0.sub.2 Mixtures", Nov. 1, 1992.
J. Stoemnos et al., Appl. Phys. Lett., vol. 58, No. 11, pp. 1196-1198, "Crystallization of Amorphous silicon by Reconstructive Transformation Utilizing Gold", Mar. 18, 1991.
R.J. Nemanich et al., Phys. Rev. B, vol. 23, No. 12, "Structure and Growth of the Interface of Pd on a-Si:H", pp. 6828-6832, Jun. 15, 1981.
M.J. Thompson et al., Appl. Phys. Lett., vol. 39, No. 3, "Silicide Formation in Pd-a-Si:H Schottky Barriers", pp. 274-277, Aug. 1, 1981.
R.J. Nemanich et al., Mat. Res. Soc. Symp. Proc., vol. 25, "Initial Phase Formation at the Interface of Ni, Pd, or Pt and Si", 6 pages, 1984.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1948051