Thin film transistor and method for fabricating the same

Details Thin film transistor and method for fabricating the same Thin film transistor and method for fabricating the same

1998-01-08

1999-02-09

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438159, 257160, 257302, H01L 29786

Patent

active

058693610

ABSTRACT:
A thin film transistor includes a substrate with a trench having first and second sides and a bottom, and a gate electrode at one of the first and second sides of the trench. The thin film transistor further includes a gate insulating layer on the entire surface of the substrate including the gate electrode, and an active layer on the gate insulating layer along the trench, the active layer having source and drain regions substantially outside the trench.

REFERENCES:
patent: 5266507 (1993-11-01), Wu
patent: 5298780 (1994-03-01), Harada
patent: 5334862 (1994-08-01), Manning et al.
patent: 5407846 (1995-04-01), Chan
A Polysilicon Transistor Technology for Large Capacity SRAMs, Shuji Ikeda et al., IEDM 90 pp. 469-472 (1990).

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