Method for improving the process uniformity in a reactor by asym

Details Method for improving the process uniformity in a reactor by asym Method for improving the process uniformity in a reactor by asym

1995-11-27

1996-09-03

Bueker, Richard

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 156345, 427569, 4272481, 118715, 118723E, C23C 1600

Patent

active

055520170

ABSTRACT:
A method for improving the etch rate uniformity and the chemical vapor deposition uniformity in a single-wafer reaction chamber was achieved. The method utilizes an asymmetric gas distribution system to increase the reactant gas flow over regions of the wafer in an etcher where the etch rates are low, and increases the reactant gas flow in CVD deposition reactors over regions of the wafer where the deposition rates are low. More specifically, a modified shower head having an array of orifices that are varied in size and spacing across the shower face are proposed to optimize the uniformity. The method is particularly useful for improving the uniformity near the wafer flat where the uniformity is known to be exceptionally poor in conventional single-wafer reactors.

REFERENCES:
patent: 5000113 (1991-03-01), Wang
patent: 5328867 (1994-07-01), Chien et al.

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