Method of manufacturing a semiconductor device having a capacito

Details Method of manufacturing a semiconductor device having a capacito Method of manufacturing a semiconductor device having a capacito

Filed on

1998-01-08

Date issued

2000-10-03

Examiner

Whitehead, Jr., Carl

Patent Class

Semiconductor device manufacturing: process

SubClass

Making passive device

SubSubClass

Stacked capacitor

Other Related Categories

438255, 438396, H01L 2120

Type

Patent

Status

active

Patent number

06127240&

Description

ABSTRACT:
A polysilicon film having a rough surface is formed by a reduced pressure CVD method at a temperature of 575.degree. C. and a deposition pressure of 0.2 Torr. Silicon ions are implanted into the polysilicon film having a rough surface. Thus, the tips of concaves and convexes at the rough surface of the polysilicon film are rounded. Then, this polysilicon film having a rough surface is patterned to form a storage node. A cell plate is formed to cover the storage node with a capacitor insulating layer therebetween. Consequently, a semiconductor device capable of suppressing leak current between capacitor electrodes can be manufactured.

REFERENCES:
patent: 4682404 (1987-07-01), Miller et al.
patent: 5037773 (1991-08-01), Lee et al.
patent: 5087583 (1992-02-01), Hazani
patent: 5223445 (1993-06-01), Fuse
patent: 5290729 (1994-03-01), Hayashide et al.
patent: 5405801 (1995-04-01), Han et al.
patent: 5597754 (1997-01-01), Lou et al.
patent: 5661340 (1997-08-01), Ema et al.
patent: 5759894 (1998-06-01), Tseng et al.
patent: 5773342 (1998-06-01), Fukase
Watanabe et al., "An Advanced Fabrication Technology of Hemispherical Grained (HSG) Poly-Si for High Capacitance Storage Electrodes" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 1991, pp. 478-480.

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