Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-04-20
1993-06-08
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257402, 257408, H01L 2910, H01L 2978
Patent
active
052182215
ABSTRACT:
A semiconductor device which includes a MOS type transistor has impurity ion implanted regions (4) of the same conductivity type as that of the semiconductor substrate (1) for controlling a threshold voltage of a channel region, at least in the vicinity of a channel region provided between the source/drain regions (6, 8) on the surface of the semiconductor substrate (1). In the device the concentration distribution in the impurity ion-implanted regions (4) is higher in the vicinity of opposite ends of the channel region and lower in a central portion of the channel region. By employing the structure of this semiconductor device, while holding a suitable threshold voltage, a high potential barrier is formed at both ends of the channel region, so that insulating breakdown voltage of the source/drain regions (6, 8) is increased. A semiconductor device of said structure is manufactured by implanting impurity ions at a predetermined tilt angle with a semiconductor substrate (1) rotating, using the transfer gate electrode (5) as a mask.
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(K.K.) Kogyochosa-Kai, Electronics-Zenshu (8) Ion Implantation Technique.
Shibata et al., "High Performance Half-Micron PMOSFETs With 0.1 .mu.m Shallow P+N Junction Utilizing Selective Silicon Growth and Rapid Thermal Annealing", IEDM 1987, pp. 590-593.
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
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