Semiconductor device provided with capacitor

Details Semiconductor device provided with capacitor Semiconductor device provided with capacitor

1994-06-22

1995-02-21

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, 257755, 257768, H01L 2702, H01L 2346, H01L 2348

Patent

active

053919068

ABSTRACT:
A semiconductor integrated circuit including a MOSFET having a polycide gate structure, a resistor and a capacitor thereon is manufactured. Polycrystalline silicon film and a dielectric film are consecutively deposited. After processes of patterning and etching the dielectric film, the remaining dielectric films are used as a etching protection mask for the resistor and a capacitor insulating film for the capacitor. Then, a refractory metal silicide for a polycide gate is uniformly deposited over the remaining dielectric films. Then, the refractory metal silicide and polycrystalline silicon are consecutively etched over a patterned resist and the remaining dielectric films to simultaneously form the polycide gate, resistor and capacitor. Thus, a resistor having a precise resistance value is manufactured in a MOSFET device having a polycide gate without excessive steps.

REFERENCES:
patent: 5187122 (1993-02-01), Bonis
Chow et al., "Refractory MoSi.sub.2 and MoSi.sub.2 /Polysilicon Bulk CMOS Circuits" IEEE Elec. Dev. Let., vol. EDL-3, No. 2 Feb. 1992 pp. 37-40.
Allan, "Thin-film devices on silicon chip withstand up to 500.degree. C." Electronics Review, Jan. 3, 1980 vol. 53 No. 1 pp. 36-40.

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