Plasma CVD of amorphous silicon thin film

Details Plasma CVD of amorphous silicon thin film Plasma CVD of amorphous silicon thin film

1993-05-28

1995-02-21

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 427574, 4272551, 4272552, B05D 306

Patent

active

053914104

ABSTRACT:
An amorphous silicon thin film is disclosed, which is produced by plasma CVD in which hydrogen-diluted SiH.sub.4 and N.sub.2 O are supplied during chemical vapor deposition as reacting source gases for the chemical vapor deposition, wherein the degree of hydrogen dilution is from 10 to 20.

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