Semiconductor device

Details Semiconductor device Semiconductor device

1987-08-18

1990-01-30

Hille, Rolf

357 2, 357 61, H01L 2348

Patent

active

048977101

ABSTRACT:
The semiconductor device comprises a silicon substrate, a boron-doped high resistant silicon carbide layer that is formed on the silicon substrate and a silicon carbide layer formed on the high resistant silicon carbide layer. The silicon carbide layer that is formed on the high resistant silicon carbide layer provides an electrical insulation for the device so that improved device characteristics are obtained.

REFERENCES:
patent: 3497773 (1970-02-01), Kisinko et al.
patent: 3716844 (1973-02-01), Brodsky
patent: 4071945 (1978-02-01), Karatsjuka et al.
patent: 4109271 (1978-08-01), Pankove
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4224636 (1980-09-01), Yonezawa et al.
patent: 4329699 (1982-05-01), Ishihara et al.
patent: 4385200 (1983-05-01), Hamakawa et al.
patent: 4531142 (1985-07-01), Weyrich et al.
patent: 4536459 (1985-08-01), Misumi et al.
patent: 4633287 (1986-12-01), Yamazaki
"Silicon Carbide FETS Aim for 300.degree. C. Operation", Electronics, Apr. 7, 1986.
"Silicon-on-Insulator Technology", IEEE Proceedings, Jun. 1986.
"Radiation-Hardened Silicon-on-Insulator Compelementary Junction Field--Effect Transistors", IEEE Electron Device Letters, May 1986.
"Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF.sub.2 and GaAs", Japanese Journal of Applied Physics, Feb. 1986.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1926763