Method of forming bonding pad

Details Method of forming bonding pad Method of forming bonding pad

1998-12-09

2000-05-30

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438653, 438654, 438656, H01L 2144

Patent

active

060690666

ABSTRACT:
A method of forming a bonding pad is provided. A substrate is provided and a multi-metal layer is formed on the substrate. An inter-metal dielectric layer with a trench is formed on the multi-metal layer. A conformal barrier layer is formed on the inter-metal dielectric layer. A first metal layer is formed on the barrier layer to fill a part of the trench. A second metal layer is formed on the first metal layer to fill the trench. A part of the first metal layer and a part of the second metal layer flowing out the trench are removed to expose the inter-metal dielectric layer. A cap layer is formed on the inter-metal dielectric layer. A passivation layer is formed on the cap layer. A part of the passivation and a part of the cap layer are removed to form a bonding pad window by a defined masking layer.

REFERENCES:
patent: 5231053 (1993-07-01), Bost
patent: 5785236 (1998-07-01), Cheung
patent: 5918149 (1999-06-01), Besser
patent: 5956612 (1999-08-01), Elliott
Wolf, "Silicon Processing for the VLSI Era, vol. 2: Process Integration," p. 273-275, 1990.

Affiliated with

Also associated with

Rating

Method of forming bonding pad does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming bonding pad, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming bonding pad will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1909762