Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-19
2000-02-15
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257307, 257309, H01L 27108
Patent
active
060256249
ABSTRACT:
A container capacitor having an elongated storage electrode for enhanced capacitance in a dynamic random access memory circuit. The electrode is preferably twice the length of the typical cell and may be coated with hemispherical-grain polysilicon to further increase the surface area of the electrode.
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M. Sakao et al., A Capacitor-Over-Bit-Line (COB) Cell with a Hemispherical-Grain Storage Node for 64Mb DRAMs, pp. 27.3.1-27.3.4.
S, Inoue, et al., A Spread Stacked Capacitor (SSC) Cell for 64Mbit DRAMs, pp. 2.3.1-2.2.4.
Crane Sara
Micro)n Technology, Inc.
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