Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-04-06
1993-10-12
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257379, 257529, 257637, H01L 2702
Patent
active
052528448
ABSTRACT:
A circuit test of a semiconductor device having a redundant circuit for repairing defective circuit is carried with the fuse portion (21) of the redundant circuit and the bonding pad portion (26) exposed and the wiring layers (23) formed on the semiconductor substrate protected with a first protective layer (32). By this step, metal shavings (29) scraped from the surface of the bonding pad by a tester electrode terminal during the circuit test can be prevented from being directly in contact with the interconnection layers, whereby generation of short circuit can be prevented. Thereafter, the surfaces of the bonding pad portion and the fuse portion are covered with a second protective layer (33) and a third protective layer (25) (polyimide). The surface of the bonding pad portion is exposed by etching. By forming the polyimide film on the bonding pad with the second protective layer interposed therebetween, the alkali solution for etching the polyimide film can be prevented from making rough the surface of the bonding pad.
REFERENCES:
patent: 4413272 (1983-11-01), Mochizuki et al.
patent: 4618878 (1986-10-01), Aoyama et al.
patent: 4628590 (1986-12-01), Udo et al.
patent: 4795720 (1989-01-01), Kawanabe et al.
patent: 4990993 (1991-02-01), Tsurumaru
"Quantitative Measurement with High Time Resolution of Internal Waveforms on MOS RAM's Using a Modified Scanning Electron Microscope", IEEE Journal of Solid-State Circuits, vol. SC-13, No. 3, Jun. 1978.
"Passivation Process for Semiconductor Device with Fusible Link Redundancy", Davis et al., IBM Technical Disclosure Bulletin, vol. 23, No. 10, Mar. 1981.
"Combined Nitride/Polyamide Mask Process", IBM Technical Disclosure Bulletin, vol. 29, No. 12, May 1987.
"Material and Processing Technologies of Polyamide for Advanced Electronic Devices", Endo et al., Solid-State Science and Technology, vol. 136, No. 10, Oct. 1987.
Bowers Courtney A.
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
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