Method for depositioning a substantially void-free aluminum film

Details Method for depositioning a substantially void-free aluminum film Method for depositioning a substantially void-free aluminum film

1996-10-15

2000-02-15

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438637, 438639, 438642, 438672, 438680, 438681, H01L 2144, H01L 214763

Patent

active

060252693

ABSTRACT:
A method of forming a conformal aluminum film which is substantially smooth and void free on a refractory metal nitride barrier layer is provided and involves an initial pretreatment of the refractory metal nitride layer by exposing it to a directional gas plasma. An aluminum metal film is then formed over the refractory metal nitride layer. The process may be used to deposit and fill a via, contact, or trench opening with substantially void-free aluminum to provide an electrically conductive path between layers in a semiconductor device.

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