Method of forming a landing pad structure in an integrated circu

Details Method of forming a landing pad structure in an integrated circu Method of forming a landing pad structure in an integrated circu

1997-12-12

2000-02-15

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438656, 438657, 438666, 438684, 438592, H01L 213205, H01L 214763, H01L 2144

Patent

active

060252650

ABSTRACT:
A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.

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