Method for preparing dielectric thin film and semiconductor devi

Details Method for preparing dielectric thin film and semiconductor devi Method for preparing dielectric thin film and semiconductor devi

1996-08-05

2000-02-15

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438660, 438663, 438661, H01L 2144

Patent

active

06025257&

ABSTRACT:
A process for preparing a semiconductor device using a dielectric thin film includes the steps of forming a first electrode on a base plate; forming a dielectric film on the first electrode, the dielectric film including a Perovskite structure oxide; forming a second electrode on the dielectric film; and annealing the first and second electrodes so that metal components of the first and second electrodes are oxidized and diffused into a crystal system of the dielectric film.

REFERENCES:
patent: 4367265 (1983-01-01), Yu et al.
patent: 4380559 (1983-04-01), Mandai et al.
patent: 4403236 (1983-09-01), Mandai et al.
patent: 4437139 (1984-03-01), Howard
patent: 4739544 (1988-04-01), Okazaki et al.
patent: 5036424 (1991-07-01), Yokotani et al.
patent: 5142437 (1992-08-01), Kammerdimer et al.
patent: 5166759 (1992-11-01), Ueno et al.
patent: 5181157 (1993-01-01), Chazono et al.
patent: 5248640 (1993-09-01), Sano et al.
patent: 5268006 (1993-12-01), Ueno et al.
patent: 5273927 (1993-12-01), Gnadinger
patent: 5312790 (1994-05-01), Sengupta et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5383088 (1995-01-01), Chapple-Sokol et al.
patent: 5393352 (1995-02-01), Summerfelt
patent: 5471364 (1995-11-01), Summerfelt et al.
patent: 5527567 (1996-06-01), Desu et al.
patent: 5587870 (1996-12-01), Anderson et al.
patent: 5620739 (1997-04-01), Azuma et al.
patent: 5717250 (1998-02-01), Schuele et al.
patent: 5789268 (1995-10-01), Chivukula et al.
English Abstract for 06-350,100 (taken from DIALOG.RTM.).
English Abstract for 06-350,029 (taken from DIALOG.RTM.).

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