Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-08-20
2000-02-15
Fahmy, Wael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
257353, 257 72, H01L 2100, H01L 2184
Patent
active
060252189
ABSTRACT:
A method of manufacturing a flat panel display or other electronic device comprising thin-film circuit elements includes the steps of depositing and patterning a less conductive film (2) and metal film (1) to provide a laminated conductor, depositing and patterning semiconductor material to provide a circuit element island (50), and then directing an energy beam (100) towards the island (50) to crystallise the semiconductor material for the island (50). In order to protect the metal film (1) from the energy beam (100) the less conductive film (2) is deposited on the metal film (1), is of a semiconductor material absorptive of the energy beam (100), and is deposited to a thickness which is larger than its melt depth (d) when heated by the energy beam (100) during the crystallisation of the semiconductor material of the island (50). When the metal film (1) is not protected in this way, then the stresses occurring can degrade the integrity of the metal film (1) and any overlying insulating films (3) and/or semiconductor islands (50).
REFERENCES:
patent: 5130829 (1992-07-01), Shannon
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5851862 (1998-12-01), Ohtani et al.
Coleman William David
Fahmy Wael
Piotrowski Tony E.
U.S. Philips Corporation
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