Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-06-26
2000-02-15
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438151, 257 49, H01L 2904
Patent
active
060252162
ABSTRACT:
A thin film transistor for a liquid crystal display includes a substrate; an active layer having source and drain regions over the substrate; a first insulating layer adjacent to the active layer and having first and second surfaces, the first surface being on an opposite side to the second surface, and the active layer being adjacent to the second surface of the first insulating layer; a gate electrode adjacent to the first surface of the first insulating layer; a first electrode in contact with the source region; a second electrode in contact with the drain region; a second insulating layer on the second electrode; and a third insulating layer over a resultant structure of the substrate.
REFERENCES:
patent: 5003356 (1991-03-01), Wakai etal.
patent: 5500538 (1996-03-01), Yamazaki et al.
patent: 5614731 (1997-03-01), Uchikoga et al.
patent: 5614732 (1997-03-01), Yamazaki et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5648674 (1997-07-01), Weisfield et al.
patent: 5790222 (1997-02-01), Kim
patent: 5825449 (1996-03-01), Shin
patent: 5828433 (1996-03-01), Shin
patent: 5872021 (1994-12-01), Matsumoto et al.
patent: 5874326 (1997-07-01), Lyu
patent: 5874746 (1995-07-01), Holmberg et al.
Bowers Charles
LG Electronics Inc.
Sulsky Martin
LandOfFree
TET-LCD method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with TET-LCD method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and TET-LCD method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1905215