Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Patent
1998-04-29
2000-05-30
Fahmy, Wael
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
438647, 438657, 438661, H01L 2122
Patent
active
060676809
ABSTRACT:
A semiconductor processing method of forming a conductively doped semiconductive material plug within a contact opening includes, a) providing a node location and a plug molding layer outwardly thereof; b) providing a contact opening through the plug molding layer to the node location; c) providing a first layer of semiconductive material over the molding layer to within the contact opening, the first layer thickness being less than one-half the contact opening width to leave a first remaining opening, the first layer having an average conductivity enhancing dopant concentration from 0 atoms/cm.sup.3 to about 5.times.10.sup.18 atoms/cm.sup.3 ; d) after providing the first layer, increasing the average conductivity enhancing dopant concentration of the first layer to greater than or equal to about 1.times.10.sup.19 atoms/cm.sup.3 ; e) after increasing the dopant concentration of the first layer, providing a second layer of semiconductive material over the first layer and to within the first remaining opening, the second layer having an average conductivity enhancing dopant concentration from 0 atoms/cm.sup.3 to about 5.times.10.sup.18 atoms/cm.sup.3 ; f) after providing the second layer within the first remaining opening, increasing the average conductivity enhancing dopant concentration of the second layer to greater than or equal to about 1.times.10.sup.19 atoms/cm.sup.3 ; and g) providing the contact opening to be substantially filled with semiconductive material having an average conductivity enhancing dopant concentration of greater than or equal to about 1.times.10.sup.19 atoms/cm.sup.3 to define a conductively doped semiconductive material plug within the contact opening.
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Pan Pai-Hung
Prall Kirk
Sharan Sujit
Eaton Kurt
Fahmy Wael
Micro)n Technology, Inc.
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