Electrostatically attracting electrode and a method of manufactu

Electricity: electrical systems and devices – Electric charge generating or conducting means – Use of forces of electric charge or field

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361233, H02N 1300

Patent

active

057814007

ABSTRACT:
The present invention allows the electrostatically attracting electrode, whose size corresponds to large-diameter wafers, to be fabricated easily and with precision.
The first electrode 1 is provided with a recess in which to install the second electrode 2. An insulating film 4 is formed in the recess and then the second electrode is securely fitted in the recess. The assembled electrode is machined to make the surfaces of the first and second electrodes flush with each other in the same plane. The flat surfaces are covered with the sprayed electrostatic attraction film 3, which is then polished until it has a predetermined thickness. This fabrication process allows the electrostatic attraction electrode suitable to large-diameter wafers.

REFERENCES:
patent: 4480284 (1984-10-01), Tojo et al.
patent: 4520421 (1985-05-01), Sakitani et al.
patent: 5099571 (1992-03-01), Logan et al.
patent: 5191506 (1993-03-01), Logan et al.
patent: 5345999 (1994-09-01), Hosokawa
patent: 5572398 (1996-11-01), Federlin
patent: 5625526 (1997-04-01), Watanabe et al.

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